RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
比较
Samsung M471B5173DB0-YK0 4GB vs Patriot Memory (PDP Systems) 4133 C19 Series 8GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
需要考虑的原因
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
45
左右 -73% 更低的延时
更快的读取速度,GB/s
19
12
测试中的平均数值
更快的写入速度,GB/s
16.6
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
26
读取速度,GB/s
12.0
19.0
写入速度,GB/s
7.8
16.6
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1939
3818
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMR16GX4M2C3000C16 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Kingston KVR16N11/8-SP 8GB
MemxPro Inc. D4S8GHIOFFC 8GB
Samsung M393B2G70BH0-YK0 16GB
Kingston KHX2666C16D4/4G 4GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3000C15-8GVR 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3600C18-8GTZRX 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2800C15-8GVSB 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Samsung M378B5673FH0-CH9 2GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C16-8GVRB 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-2400C15-8GFT 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
报告一个错误
×
Bug description
Source link