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Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT51264BF160B.D16F 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Crucial Technology CT51264BF160B.D16F 4GB

Crucial Technology CT51264BF160B.D16F 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Crucial Technology CT51264BF160B.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.D16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 -67% 更低的延时
  • 更快的读取速度，GB/s
    13.3 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 8.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT51264BF160B.D16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 27
  • 读取速度，GB/s
    12.3 left arrow 13.3
  • 写入速度，GB/s
    8.0 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2221

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB

Crucial Technology CT51264BF160B.D16F 4GB RAM的比较

G Skill Intl F3-1600C11-4GIS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
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Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
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Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
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Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
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Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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Kingston 99U5428-046.A00LF 4GB
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Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
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Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston KVR24N17S8/4 4GB
内存RAM
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AMD R5316G1609U2K 8GB
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Crucial Technology CT8G4SFRA32A.M8FJ 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Kingston 9965640-001.C00G 16GB
内存RAM
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Micron Technology 16JSF25664HZ-1G1F1 2GB
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Samsung M378A2K43DB1-CTD 16GB
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SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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Kingston CBD24D4S7D8MB-16 16GB
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