Samsung M471B5273DH0-CH9 4GB vs Corsair CMK16GX4M2K4266C19 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Corsair CMK16GX4M2K4266C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 47

左右 -176% 更低的延时
更快的读取速度，GB/s

20.9 9.3

测试中的平均数值
更快的写入速度，GB/s

18.1 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Corsair CMK16GX4M2K4266C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 17
读取速度，GB/s

9.3 20.9
写入速度，GB/s

5.9 18.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 3863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Maxsun MSD416G26Q3 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

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Corsair CMD16GX3M2A1866C9 8GB

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Corsair CMK32GX4M4C3333C16 8GB

Corsair CMK32GX4M4C3333C16 8GB

Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Kingston K9CXF2-MIE 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB