Samsung M471B5273DH0-CH9 4GB vs Corsair CMSX4GX3M1A1600C9 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 47

左右 -24% 更低的延时
更快的读取速度，GB/s

12.8 9.3

测试中的平均数值
更快的写入速度，GB/s

9.1 5.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

47 38
读取速度，GB/s

9.3 12.8
写入速度，GB/s

5.9 9.1
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 6 7 9
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1413 2099

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited IM48GU48N24-FFFHM 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Kingston 9905700-072.A01G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4SFRA32A.C8FE 8GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston HP37D4U1S8ME-16X 16GB

Kingston HP37D4U1S8ME-16X 16GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Kingston 9932301-P01.A00G 4GB

Kingston 9932301-P01.A00G 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston KHX2933C17D4/8G 8GB

Kingston KHX2933C17D4/8G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB