Samsung M471B5273DH0-CH9 4GB vs Crucial Technology BLS8G4D30AESEK.M8FE 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D30AESEK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 47

左右 -74% 更低的延时
更快的读取速度，GB/s

18.6 9.3

测试中的平均数值
更快的写入速度，GB/s

15.1 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 27
读取速度，GB/s

9.3 18.6
写入速度，GB/s

5.9 15.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1413 3561

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston KF3200C20S4/8G 8GB

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Samsung M471B5273DH0-CH9 4GB

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Crucial Technology BLS8G4D30AESEK.M8FE 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingston 9905624-018.A00G 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

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SK Hynix HMT351S6BFR8C-H9 4GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

Kingston 9905584-016.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PBA 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C

Elpida EBJ40EG8BFWB-JS-F 4GB

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Avant Technology W642GU42J7240N8 16GB

Avant Technology W642GU42J7240N8 16GB