Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-3333C16-8GTZSK 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3333C16-8GTZSK 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZSK 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 47

左右 -135% 更低的延时
更快的读取速度，GB/s

20 9.3

测试中的平均数值
更快的写入速度，GB/s

17.1 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3333C16-8GTZSK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 20
读取速度，GB/s

9.3 20.0
写入速度，GB/s

5.9 17.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 3703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-CH9 4GB

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G Skill Intl F4-3333C16-8GTZSK 8GB

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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G Skill Intl F3-14900CL9-4GBZL 4GB

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Essencore Limited KD48GU880-36A180Z 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F4-3200C14-16GTZKW 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston CBD32D4S2S1ME-8 8GB