Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-3600C19-8GSXK 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

G Skill Intl F4-3600C19-8GSXK 8GB

G Skill Intl F4-3600C19-8GSXK 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3600C19-8GSXK 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXK 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 47

左右 -74% 更低的延时
更快的读取速度，GB/s

19.2 9.3

测试中的平均数值
更快的写入速度，GB/s

13.4 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3600C19-8GSXK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 27
读取速度，GB/s

9.3 19.2
写入速度，GB/s

5.9 13.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 3399

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM2X2048-6400C5DHX 2GB

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SK Hynix HMA82GU6DJR8N-XN 16GB

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Heoriady M471A1K43BB1-CRC 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Apacer Technology 78.C2GF6.AU20B 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

Micron Technology 18HTF12872AY-800F1 1GB

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Corsair CMD64GX4M4C3200C16 16GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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InnoDisk Corporation M4SI-8GS1NC0K-C 8GB