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Samsung M471B5273DH0-CK0 4GB
A-DATA Technology DDR4 2800 8GB

Samsung M471B5273DH0-CK0 4GB vs A-DATA Technology DDR4 2800 8GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
A-DATA Technology DDR4 2800 8GB 需要考虑的原因
A-DATA Technology DDR4 2800 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 41
    左右 -95% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
A-DATA Technology DDR4 2800 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 21
  • 读取速度，GB/s
    13.3 left arrow 19.1
  • 写入速度，GB/s
    9.0 left arrow 15.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 3350

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

A-DATA Technology DDR4 2800 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9965669-031.A00G 16GB
Kingston 9965669-031.A00G 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
A-DATA Technology DDR4 2800 8GB
A-DATA Technology DDR4 2800 8GB
内存RAM
Patriot Memory (PDP Systems) PSD416G32002 16GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
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内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
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Samsung M471A1A43DB0-CPB 8GB
内存RAM
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Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston 9905624-025.A00G 8GB
Kingston 9905624-025.A00G 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM