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Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Samsung M471B5273DH0-CK0 4GB vs Crucial Technology CT8G4DFS8213.C8FBD1 8GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
Crucial Technology CT8G4DFS8213.C8FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 41
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 33
  • 读取速度，GB/s
    13.3 left arrow 14.5
  • 写入速度，GB/s
    9.0 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 2543

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Samsung M471B5273DH0-CK0 4GB
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Corsair CM2X1024-8500C5D 1GB
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G Skill Intl F4-3200C14-8GTZ 8GB
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Kingston K1N7HK-ELC 2GB
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Kingmax Semiconductor GSAH22F-18---------- 16GB
内存RAM
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内存RAM
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Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
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内存RAM
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内存RAM
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Mushkin MRA4S320GJJM32G 32GB
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Essencore Limited KD48GU88C-26N1600 8GB
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