Samsung M471B5273DH0-CK0 4GB vs Mushkin 99[2/7/4]208F 8GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Mushkin 99[2/7/4]208F 8GB

Mushkin 99[2/7/4]208F 8GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

Mushkin 99[2/7/4]208F 8GB

需要考虑的原因
Mushkin 99[2/7/4]208F 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 41

左右 -105% 更低的延时
更快的读取速度，GB/s

18.9 13.3

测试中的平均数值
更快的写入速度，GB/s

15.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Mushkin 99[2/7/4]208F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 20
读取速度，GB/s

13.3 18.9
写入速度，GB/s

9.0 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 3230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DOVF1B163G2G 2GB

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Kingston 9965589-030.D01G 8GB

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Kingmax Semiconductor GLLH22F-18---------- 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 9905665-017.A00G 4GB

Kingston 99U5584-017.A00LF 4GB

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Hewlett-Packard 7EH74AA#ABC 8GB

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Corsair CMW128GX4M8C3200C16 16GB