Samsung M471B5273DH0-CK0 4GB vs Solarflare Communications CT16G4DFD824A.C16FBR 16GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

更快的写入速度，GB/s

9.0 8.2

测试中的平均数值

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

需要考虑的原因
Solarflare Communications CT16G4DFD824A.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

14.3 13.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

13.3 14.3
写入速度，GB/s

9.0 8.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2016 2633

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Ramaxel Technology RMUA5110ME78HAF-2666 8GB

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Crucial Technology CT4G4SFS8266.C8FE 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston K1N7HK-ELC 2GB

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G Skill Intl F4-2400C16-8GIS 8GB

G Skill Intl F4-2400C16-8GIS 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX2400C15D4/4G 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB