Samsung M471B5273EB0-CK0 4GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

A-DATA Technology DDR4 3200 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

17.2 12.3

测试中的平均数值
更快的写入速度，GB/s

13.8 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

12.3 17.2
写入速度，GB/s

8.9 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-GEN D4S4GL32A16TS 4GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Micron Technology 18ASF1G72PZ-2G1A2 8GB

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G Skill Intl F4-3200C16-16GTZSK 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX3733C19D4/16GX 16GB

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Corsair CMD16GX4M4B3200C16 4GB

Corsair CMD16GX4M4B3200C16 4GB