Samsung M471B5273EB0-CK0 4GB vs Dust Leopard DDR4-2400 CL17 8GB 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Dust Leopard DDR4-2400 CL17 8GB 8GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

更快的写入速度，GB/s

8.9 7.8

测试中的平均数值

Dust Leopard DDR4-2400 CL17 8GB 8GB

需要考虑的原因
Dust Leopard DDR4-2400 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 -67% 更低的延时
更快的读取速度，GB/s

15.1 12.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 24
读取速度，GB/s

12.3 15.1
写入速度，GB/s

8.9 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 2408

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

G Skill Intl F3-2400C10-8GTX 8GB

G Skill Intl F3-2400C10-8GTX 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB