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Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3000C15-8GTZB 8GB

Samsung M471B5273EB0-CK0 4GB vs G Skill Intl F4-3000C15-8GTZB 8GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
G Skill Intl F4-3000C15-8GTZB 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GTZB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 40
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3000C15-8GTZB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 18.1
  • 写入速度，GB/s
    8.9 left arrow 14.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 3352

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

G Skill Intl F4-3000C15-8GTZB 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3200C16-16GTZ 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3000C15-8GTZB 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston KHX2666C15S4/8G 8GB
Kingston KHX2666C15S4/8G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK64GX4M4A2666C16 16GB
Corsair CMK64GX4M4A2666C16 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston MSI32D4S2S1ME-8 8GB
Kingston MSI32D4S2S1ME-8 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM