Samsung M471B5273EB0-CK0 4GB vs Kingston 9905624-023.A00G 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Kingston 9905624-023.A00G 8GB

Kingston 9905624-023.A00G 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Kingston 9905624-023.A00G 8GB

需要考虑的原因
Kingston 9905624-023.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 40

左右 -25% 更低的延时
更快的读取速度，GB/s

14.5 12.3

测试中的平均数值
更快的写入速度，GB/s

10.1 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Kingston 9905624-023.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 32
读取速度，GB/s

12.3 14.5
写入速度，GB/s

8.9 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2707

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-GEN D4S8GL32A8TS 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston ACR256X64D3S1333C9 2GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

Corsair CMR32GX4M4C3000C15 8GB

Corsair CMR32GX4M4C3000C15 8GB