Samsung M471B5273EB0-CK0 4GB vs Samsung M471B5173BH0-CK0 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 42

左右 5% 更低的延时
更快的读取速度，GB/s

12.3 12

测试中的平均数值
更快的写入速度，GB/s

8.9 7.2

测试中的平均数值

Samsung M471B5173BH0-CK0 4GB

需要考虑的原因
Samsung M471B5173BH0-CK0 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 42
读取速度，GB/s

12.3 12.0
写入速度，GB/s

8.9 7.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1789 1933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Mushkin MRX4U300GJJM16G 16GB

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Samsung M471B5273EB0-CK0 4GB

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Mushkin 99[2/7/4]190F 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology CT102464BA160B.M16 8GB

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Apacer Technology 78.CAGMR.40C0B 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3200C16-16GTZN 16GB

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Elpida EBJ40UG8EFU5-GNL-F 4GB

Elpida EBJ40UG8EFU5-GNL-F 4GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

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Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB