Samsung M471B5673FH0-CF8 2GB vs Micron Technology AFLD44EK2P 4GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 71

左右 58% 更低的延时

Micron Technology AFLD44EK2P 4GB

需要考虑的原因
Micron Technology AFLD44EK2P 4GB

报告一个错误

更快的读取速度，GB/s

15.3 10.6

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Micron Technology AFLD44EK2P 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 71
读取速度，GB/s

10.6 15.3
写入速度，GB/s

6.8 6.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1479 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D32AESB.M16FE 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair MK16GX44A2666C16 4GB

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PNY Electronics PNY 2GB

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Crucial Technology CT8G4DFD824A.M16FB 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Kingston 99U5403-003.A00LF 2GB

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Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Gloway International Co. Ltd. TYP4U3200E16082C 8GB

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