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Samsung M471B5673FH0-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M471B5673FH0-CF8 2GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 25
  • 读取速度，GB/s
    10.6 left arrow 14.3
  • 写入速度，GB/s
    6.8 left arrow 10.7
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2583

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston KMKYF9-HYA 8GB
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内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Crucial Technology CT32G4SFD832A.C16FB 32GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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Transcend Information TS2GSH64V4B 16GB
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PNY Electronics PNY 2GB
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Corsair CMD32GX4M2A2800C16 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Corsair CMK8GX4M2A2800C16 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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SK Hynix GKE160SO102408-3000 16GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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G Skill Intl F4-3000C14-8GVK 8GB
内存RAM
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Corsair CMD8GX3M2A2800C12 4GB
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Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
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