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Samsung M471B5673FH0-CF8 2GB
Samsung M378A4G43MB1-CTD 32GB

Samsung M471B5673FH0-CF8 2GB vs Samsung M378A4G43MB1-CTD 32GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 21% 更低的延时
Samsung M378A4G43MB1-CTD 32GB 需要考虑的原因
Samsung M378A4G43MB1-CTD 32GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Samsung M378A4G43MB1-CTD 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 38
  • 读取速度，GB/s
    10.6 left arrow 15.4
  • 写入速度，GB/s
    6.8 left arrow 12.6
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3147

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Samsung M378A4G43MB1-CTD 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
内存RAM
Crucial Technology CT8G3S1339M.M16FDD 8GB
Crucial Technology CT8G3S1339M.M16FDD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3600C15-8GTZ 8GB
G Skill Intl F4-3600C15-8GTZ 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMT32GX4M4C3200C16 8GB
Corsair CMT32GX4M4C3200C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM