RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5673FH0-CH9 2GB
Kingston XN205T-HYD2 16GB

Samsung M471B5673FH0-CH9 2GB vs Kingston XN205T-HYD2 16GB

总分
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分
star star star star star
Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CH9 2GB 需要考虑的原因
Samsung M471B5673FH0-CH9 2GB
报告一个错误
Kingston XN205T-HYD2 16GB 需要考虑的原因
Kingston XN205T-HYD2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 41
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CH9 2GB
Kingston XN205T-HYD2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 28
  • 读取速度，GB/s
    11.1 left arrow 17.5
  • 写入速度，GB/s
    8.2 left arrow 16.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1348 left arrow 3773

Samsung M471B5673FH0-CH9 2GB RAM的比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Elpida EBJ21UE8BFU0-DJ-F 2GB

Kingston XN205T-HYD2 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Micron Technology 8KTF51264HZ-1G6D1 4GB
Micron Technology 8KTF51264HZ-1G6D1 4GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston KHX2400C15D4/4G 4GB
Kingston KHX2400C15D4/4G 4GB
内存RAM