Samsung M471B5673FH0-CH9 2GB vs SK Hynix HMA82GS6AFR8N-UH 16GB

总分

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

差异规格评论

差异

Samsung M471B5673FH0-CH9 2GB

需要考虑的原因
Samsung M471B5673FH0-CH9 2GB

报告一个错误

SK Hynix HMA82GS6AFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GS6AFR8N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

13.9 11.1

测试中的平均数值
更快的写入速度，GB/s

9.6 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CH9 2GB

SK Hynix HMA82GS6AFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

11.1 13.9
写入速度，GB/s

8.2 9.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1348 2461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston HP32D4S2S1ME-8 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Crucial Technology CT8G4SFD824A.C16FE 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Smart Modular SF4641G8CKHI6DFSEG 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Dust Leopard DDR4-2400 C16 8GB 8GB

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AMD R534G1601U1S-UO 4GB

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Crucial Technology CT4G4SFS8213.C8FHP 4GB

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SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB