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Samsung M471B5673FH0-CH9 2GB
SK Hynix HMT325S6EFR8A-PB 2GB

Samsung M471B5673FH0-CH9 2GB vs SK Hynix HMT325S6EFR8A-PB 2GB

总分
star star star star star
Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

总分
star star star star star
SK Hynix HMT325S6EFR8A-PB 2GB

SK Hynix HMT325S6EFR8A-PB 2GB

差异 规格 评论

差异

Samsung M471B5673FH0-CH9 2GB 需要考虑的原因
Samsung M471B5673FH0-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    11.1 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 6.7
    测试中的平均数值
SK Hynix HMT325S6EFR8A-PB 2GB 需要考虑的原因
SK Hynix HMT325S6EFR8A-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 -41% 更低的延时
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CH9 2GB
SK Hynix HMT325S6EFR8A-PB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    41 left arrow 29
  • 读取速度，GB/s
    11.1 left arrow 9.6
  • 写入速度，GB/s
    8.2 left arrow 6.7
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1348 left arrow 1204

Samsung M471B5673FH0-CH9 2GB RAM的比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Elpida EBJ21UE8BFU0-DJ-F 2GB

SK Hynix HMT325S6EFR8A-PB 2GB RAM的比较

AMD R534G1601U1S 4GB
Netac Technology Co Ltd E40832A 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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