Samsung M471B5674QH0-YK0 2GB vs Corsair CMK16GX4M2K4400C19 8GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

Corsair CMK16GX4M2K4400C19 8GB

Corsair CMK16GX4M2K4400C19 8GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

Corsair CMK16GX4M2K4400C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4400C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

19.4 7.2

测试中的平均数值
更快的写入速度，GB/s

17.6 3.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

Corsair CMK16GX4M2K4400C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

7.2 19.4
写入速度，GB/s

3.0 17.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

915 4181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BA160B.C16F 4GB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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Kingston KHX1600C9D3/8G 8GB

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Neo Forza NMUD416E82-3600 16GB

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Crucial Technology CT8G4SFRA32A.C16FG 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Ramaxel Technology RMUA5090KE68H9F2133 4GB

Ramaxel Technology RMUA5090KE68H9F2133 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB