Samsung M471B5674QH0-YK0 2GB vs Samsung M471B5173DB0-YK0 4GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 45

左右 16% 更低的延时

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12 7.2

测试中的平均数值
更快的写入速度，GB/s

7.8 3.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5173DB0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

38 45
读取速度，GB/s

7.2 12.0
写入速度，GB/s

3.0 7.8
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

915 1939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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Corsair CMK128GX4M8A2133C13 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CM4B8G1J3000K16W4 8GB

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Kingston 9965525-018.A00LF 4GB

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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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Panram International Corporation W4U2400PS-8G 8GB

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Nanya Technology NT1GT72U8PA0BY-37B 1GB

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G Skill Intl F4-3200C16-8GVS 8GB

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Ramaxel Technology RMN1740HC48D8F667A 2GB

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Kingston 9905713-028.A00G 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Kingston 9905403-134.A00LF 2GB

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Gloway International (HK) STK4U2400D17042C 4GB

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Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB