Samsung M471B5773DH0-CH9 2GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异规格评论

差异

Samsung M471B5773DH0-CH9 2GB

需要考虑的原因
Samsung M471B5773DH0-CH9 2GB

报告一个错误

更快的写入速度，GB/s

7.2 6.6

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 43

左右 -79% 更低的延时
更快的读取速度，GB/s

12 11

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CH9 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 24
读取速度，GB/s

11.0 12.0
写入速度，GB/s

7.2 6.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1393 1433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F3-2133C9-4GAB 4GB

Kingston ACR26D4S9S8MH-8 8GB

Kingston ACR26D4S9S8MH-8 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

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Kingston HP37D4U1S8ME-8XR 8GB

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