Samsung M471B5773DH0-CK0 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

差异规格评论

差异

Samsung M471B5773DH0-CK0 2GB

需要考虑的原因
Samsung M471B5773DH0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 65

左右 58% 更低的延时
更快的写入速度，GB/s

7.8 1,592.0

测试中的平均数值
更高的内存带宽，mbps

12800 5300

左右 2.42% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 12.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5773DH0-CK0 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

27 65
读取速度，GB/s

12.2 3,580.8
写入速度，GB/s

7.8 1,592.0
内存带宽，mbps

12800 5300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

9-9-9-24 / 1600 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

1763 572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905678-005.A00G 8GB

Kingston 9905678-005.A00G 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Corsair CMK32GX4M4K4000C19 8GB

Corsair CMK32GX4M4K4000C19 8GB

Kingston K531R8-MIN 4GB

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