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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
AMD R7S44G2606U1S 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs AMD R7S44G2606U1S 4GB

总分
star star star star star
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分
star star star star star
AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

差异 规格 评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB 需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
AMD R7S44G2606U1S 4GB 需要考虑的原因
AMD R7S44G2606U1S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 46
    左右 -130% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 13.6
    测试中的平均数值

规格

完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
AMD R7S44G2606U1S 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 20
  • 读取速度，GB/s
    14.2 left arrow 18.9
  • 写入速度，GB/s
    13.6 left arrow 14.3
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2717 left arrow 2707

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

AMD R7S44G2606U1S 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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最新比较

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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