SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Crucial Technology CT8G4DFS8266.K8FB 8GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

Crucial Technology CT8G4DFS8266.K8FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.K8FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的读取速度，GB/s

17.5 14.2

测试中的平均数值
更快的写入速度，GB/s

14.1 13.6

测试中的平均数值

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

14.2 17.5
写入速度，GB/s

13.6 14.1
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2717 2995

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Crucial Technology CT8G4DFS8266.K8FB 8GB

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Maxsun MSD48G30Q3 8GB

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G Skill Intl F3-1600C11-4GIS 4GB

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Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3200C16-8GTZR 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB