RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KF3733C19D4/16GX 16GB
比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Kingston KF3733C19D4/16GX 16GB
总分
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
总分
Kingston KF3733C19D4/16GX 16GB
差异
规格
评论
差异
需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
报告一个错误
更快的写入速度,GB/s
13.6
13.4
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Kingston KF3733C19D4/16GX 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
46
左右 -44% 更低的延时
更快的读取速度,GB/s
17.8
14.2
测试中的平均数值
规格
完整的技术规格清单
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KF3733C19D4/16GX 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
46
32
读取速度,GB/s
14.2
17.8
写入速度,GB/s
13.6
13.4
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, , CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2717
3399
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KF3733C19D4/16GX 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KF3733C19D4/16GX 16GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.CAGPP.40C0B 8GB
A-DATA Technology AD73I1B1672EG 2GB
Apacer Technology GD2.1527WC.001 8GB
Kingston 99U5471-020.A00LF 4GB
Samsung M378A1K43BB2-CRC 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Crucial Technology CT8G4DFD8213.16FA11 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905678-005.A00G 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Samsung M471B5673FH0-CH9 2GB
Corsair CMK16GX4M2Z2666C16 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMK64GX4M8A2400C14 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4S240FSD.16FD 16GB
报告一个错误
×
Bug description
Source link