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SK Hynix DMT451E6BFR8C-PB 4GB
SK Hynix HMT451U6BFR8C-PB 4GB

SK Hynix DMT451E6BFR8C-PB 4GB vs SK Hynix HMT451U6BFR8C-PB 4GB

总分
star star star star star
SK Hynix DMT451E6BFR8C-PB 4GB

SK Hynix DMT451E6BFR8C-PB 4GB

总分
star star star star star
SK Hynix HMT451U6BFR8C-PB 4GB

SK Hynix HMT451U6BFR8C-PB 4GB

差异 规格 评论

差异

SK Hynix DMT451E6BFR8C-PB 4GB 需要考虑的原因
SK Hynix DMT451E6BFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 33% 更低的延时
SK Hynix HMT451U6BFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT451U6BFR8C-PB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.9
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix DMT451E6BFR8C-PB 4GB
SK Hynix HMT451U6BFR8C-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 42
  • 读取速度，GB/s
    13.4 left arrow 14.2
  • 写入速度，GB/s
    7.9 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2028 left arrow 2231

SK Hynix DMT451E6BFR8C-PB 4GB RAM的比较

Kingston CAC24D4S7D8MB-16 16GB

SK Hynix HMT451U6BFR8C-PB 4GB RAM的比较

SK Hynix HMT451U6AFR8C-PB 4GB
Samsung M379B5273CH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DMT451E6BFR8C-PB 4GB
SK Hynix DMT451E6BFR8C-PB 4GB
SK Hynix HMT451U6BFR8C-PB 4GB
SK Hynix HMT451U6BFR8C-PB 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Asgard VMA45UH-MEC1U2AW2 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9905712-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2133C15-8GFXR 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905665-023.A00G 4GB
Kingston 9905665-023.A00G 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Mushkin 99[2/7/4]190F 4GB
Mushkin 99[2/7/4]190F 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M386A8K40BM1-CRC 64GB
Samsung M386A8K40BM1-CRC 64GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM