SK Hynix HMA425S6AFR6N-UH 2GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

总分

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异规格评论

差异

SK Hynix HMA425S6AFR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6AFR6N-UH 2GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 86

左右 -146% 更低的延时
更快的读取速度，GB/s

14.8 13.5

测试中的平均数值
更快的写入速度，GB/s

11.2 6.3

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA425S6AFR6N-UH 2GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

86 35
读取速度，GB/s

13.5 14.8
写入速度，GB/s

6.3 11.2
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1469 2336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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