SK Hynix HMA451U6AFR8N-TF 4GB vs G Skill Intl F4-3600C16-8GTZSW 8GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

差异规格评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 -54% 更低的延时
更快的读取速度，GB/s

22.7 14.7

测试中的平均数值
更快的写入速度，GB/s

18.6 10.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3600C16-8GTZSW 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 24
读取速度，GB/s

14.7 22.7
写入速度，GB/s

10.6 18.6
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2438 4202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673EH1-CF8 2GB

Kingston 9905625-062.A00G 8GB

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Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Samsung M471B5673FH0-CF8 2GB

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Samsung M471B5773CHS-CF8 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Patriot Memory (PDP Systems) 4000 C19 Series 8GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Samsung M471B5273CH0-CH9 4GB

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Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

A-DATA Technology AX5U6000C4016G-B 16GB

A-DATA Technology AX5U6000C4016G-B 16GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9965640-035.C00G 32GB

Kingston 9965640-035.C00G 32GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB