SK Hynix HMA82GS6CJR8N-VK 16GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 36

左右 -80% 更低的延时
更快的读取速度，GB/s

19.7 15

测试中的平均数值
更快的写入速度，GB/s

15.2 10.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 20
读取速度，GB/s

15.0 19.7
写入速度，GB/s

10.1 15.2
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2657 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5673FH0-CF8 2GB

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Corsair CMH32GX4M2Z3200C16 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M471A5244CB0-CWE 4GB

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Kingston KHX3200C16D4/16GX 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

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EVGA 8GX-D4-2800-MR 8GB

EVGA 8GX-D4-2800-MR 8GB