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SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA851S6AFR6N-UH 4GB vs SK Hynix HMA425S6BJR6N-UH 2GB

总分
star star star star star
SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

总分
star star star star star
SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

差异 规格 评论

差异

SK Hynix HMA851S6AFR6N-UH 4GB 需要考虑的原因
SK Hynix HMA851S6AFR6N-UH 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 101
    左右 62% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 7.0
    测试中的平均数值
SK Hynix HMA425S6BJR6N-UH 2GB 需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 13.8
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA425S6BJR6N-UH 2GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 101
  • 读取速度，GB/s
    13.8 left arrow 14.2
  • 写入速度，GB/s
    9.8 left arrow 7.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2073 left arrow 1313

SK Hynix HMA851S6AFR6N-UH 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA425S6BJR6N-UH 2GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMSX4GX3M1A1600C9 4GB
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A-DATA Technology DOVF1B163G2G 2GB
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Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
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Kllisre M471A3243BB0-CP50 16GB
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Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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A-DATA Technology AO1E34RCTV2-BZWS 32GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM