SK Hynix HMAA1GU6CJR6N-XN 8GB vs Samsung M378A5244CB0-CTD 4GB

总分

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

差异规格评论

差异

SK Hynix HMAA1GU6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GU6CJR6N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 6% 更低的延时
更快的读取速度，GB/s

16.7 15.8

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

更快的写入速度，GB/s

11.8 10.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMAA1GU6CJR6N-XN 8GB

Samsung M378A5244CB0-CTD 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

34 36
读取速度，GB/s

16.7 15.8
写入速度，GB/s

10.6 11.8
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2789 2497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GVKB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905744-023.A00G 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston 99U5700-027.A00G 8GB

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Kingston 9905625-030.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9965662-015.A00G 16GB

Kingston 9965662-015.A00G 16GB

Kingston 9905474-052.A00LF 2GB

Kingston 9905474-052.A00LF 2GB

Kingston 99P5474-034.A00LF 2GB

Kingston 99P5474-034.A00LF 2GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB