SK Hynix HMT151R7TFR4C-H9 4GB vs Kingston 9905711-017.A00G 4GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

Kingston 9905711-017.A00G 4GB

需要考虑的原因
Kingston 9905711-017.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 48

左右 -12% 更低的延时
更快的读取速度，GB/s

14.1 10.1

测试中的平均数值
更快的写入速度，GB/s

11.0 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston 9905711-017.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 43
读取速度，GB/s

10.1 14.1
写入速度，GB/s

7.0 11.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1955 2260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5170FH0-CK0 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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G Skill Intl F4-4000C16-16GVKA 16GB

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Micron Technology 8ATF1G64AZ-2G6E1 8GB

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Crucial Technology 8G4US2400.M8B1 8GB

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Corsair CMD128GX4M8B2800C14 16GB

Corsair CMD128GX4M8B2800C14 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Samsung M393A2K43CB1-CRC 16GB

Samsung M393A2K43CB1-CRC 16GB

SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

Apacer Technology GD2.11173T.001 4GB

Apacer Technology GD2.11173T.001 4GB

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Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB