SK Hynix HMT325S6BFR8C-H9 2GB vs Kingston 9965604-008.C00G 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 47

左右 13% 更低的延时
更快的读取速度，GB/s

11.6 11

测试中的平均数值

Kingston 9965604-008.C00G 8GB

需要考虑的原因
Kingston 9965604-008.C00G 8GB

报告一个错误

更快的写入速度，GB/s

8.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9965604-008.C00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 47
读取速度，GB/s

11.6 11.0
写入速度，GB/s

7.3 8.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 2341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M378B5673EH1-CF8 2GB

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Samsung M471A5143SB1-CRC 4GB

Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB