SK Hynix HMT325S6BFR8C-H9 2GB vs Micron Technology 9ASF1G72PZ-2G3A1 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 48

左右 15% 更低的延时
更快的读取速度，GB/s

11.6 10.2

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G3A1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G3A1 8GB

报告一个错误

更快的写入速度，GB/s

7.4 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 48
读取速度，GB/s

11.6 10.2
写入速度，GB/s

7.3 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 2190

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-CK0 8GB

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Kingston HX424C15FB/8 8GB

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Golden Empire CL14-14-14 D4-2400 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Transcend Information TS1GLH64V4H 8GB

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Corsair CM2X1024-6400C4 1GB

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