SK Hynix HMT325S6BFR8C-H9 2GB vs SK Hynix HMT351S6CFR8C-PB 4GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 11% 更低的延时

SK Hynix HMT351S6CFR8C-PB 4GB

需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB

报告一个错误

更快的写入速度，GB/s

8.0 7.3

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT351S6CFR8C-PB 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 46
读取速度，GB/s

11.6 11.6
写入速度，GB/s

7.3 8.0
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1438 1854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5712-002.A00G 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT4G4SFS824A.C8FBD2 4GB

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SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT325S6CFR8C-PB 2GB

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Kingston MSI24D4U7S8MH-8 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Transcend Information TS1GLH64V4H 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB