SK Hynix HMT325S6BFR8C-H9 2GB vs Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

20.2 11.6

测试中的平均数值
更快的写入速度，GB/s

18.1 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

11.6 20.2
写入速度，GB/s

7.3 18.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 4046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GTRG 8GB

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Corsair CMK16GX4M2B2800C14 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Patriot Memory (PDP Systems) PSD416G24002 16GB

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Corsair CMD64GX4M4A2666C15 16GB

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Kingston KVT8FP-HYC 4GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

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Kingston HP26D4S9S1ME-4 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston 99U5734-036.A00G 16GB

Kingston 99U5734-036.A00G 16GB