SK Hynix HMT325S6CFR8C-H9 2GB vs Avant Technology J642GU42J7240N4 16GB

总分

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分

Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB

报告一个错误

Avant Technology J642GU42J7240N4 16GB

需要考虑的原因
Avant Technology J642GU42J7240N4 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 43

左右 -72% 更低的延时
更快的读取速度，GB/s

16.4 10.7

测试中的平均数值
更快的写入速度，GB/s

12.5 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-H9 2GB

Avant Technology J642GU42J7240N4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 25
读取速度，GB/s

10.7 16.4
写入速度，GB/s

6.8 12.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1314 2946

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5665-001.A00G 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston ACR26D4U9S8MH-8 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Mushkin MR[A/B]4U320GJJM8G 8GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Kingston 99U5712-009.A00G 16GB

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Kingston 99U5403-036.A00G 4GB

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Kingston 9905625-011.A00G 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

AMD AE34G2139U2 4GB

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Corsair CMK8GX4M2C3000C16 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB