SK Hynix HMT325S6CFR8C-H9 2GB vs Corsair CMR16GX4M2D3000C16 8GB

总分

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB

报告一个错误

Corsair CMR16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

18.1 10.7

测试中的平均数值
更快的写入速度，GB/s

13.9 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMR16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

10.7 18.1
写入速度，GB/s

6.8 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1314 3365

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CM4X8GE2133C13K4 8GB

Corsair CM4X8GE2133C13K4 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9905711-038.A00G 8GB

Kingston 9905711-038.A00G 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

Lexar Co Limited LD4AS008G-H2666GST 8GB