SK Hynix HMT325S6CFR8C-H9 2GB vs Crucial Technology BLS4G4D240FSB.8FARG 4GB

总分

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB

报告一个错误

Crucial Technology BLS4G4D240FSB.8FARG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FARG 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 43

左右 -34% 更低的延时
更快的读取速度，GB/s

16.1 10.7

测试中的平均数值
更快的写入速度，GB/s

12.3 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 32
读取速度，GB/s

10.7 16.1
写入速度，GB/s

6.8 12.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1314 2902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA851U6DJR6N-XN 4GB

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Kingston 9905744-035.A00G 16GB

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Corsair CML8GX3M2A1600C9 4GB

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Micron Technology 18ASF1G72PZ-2G1AV 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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A-DATA Technology DQVE1908 512MB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Corsair CM3X8GA2400C11Y2R 8GB

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Ramaxel Technology RMSA3260MB78HAF2400 8GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB