SK Hynix HMT325U6CFR8C-PB 2GB vs Avant Technology W642GU42J5213N 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Avant Technology W642GU42J5213N 16GB

需要考虑的原因
Avant Technology W642GU42J5213N 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更快的读取速度，GB/s

18.3 12.3

测试中的平均数值
更快的写入速度，GB/s

13.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Avant Technology W642GU42J5213N 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

12.3 18.3
写入速度，GB/s

8.1 13.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386A2G40DB0-CPB 16GB

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Samsung M378B5673FH0-CH9 2GB

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Colorful Technology Ltd BAPC08G2666D4S8 8GB

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Corsair CMD16GX4M4B3600C18 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung T471A1K43CB1-CRC 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston 9905678-026.A00G 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

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Ramaxel Technology RMUA5200ME78HAF-3200 8GB

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