SK Hynix HMT325U6CFR8C-PB 2GB vs Crucial Technology CT4G4SFS8213.C8FBR2 4GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

12.9 12.3

测试中的平均数值
更快的写入速度，GB/s

11.4 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

12.3 12.9
写入速度，GB/s

8.1 11.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 2136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

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Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Samsung M471A5244CB0-CWE 4GB

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Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB