SK Hynix HMT325U6CFR8C-PB 2GB vs G Skill Intl F4-2400C15-16GFT 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

G Skill Intl F4-2400C15-16GFT 16GB

需要考虑的原因
G Skill Intl F4-2400C15-16GFT 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 43

左右 -26% 更低的延时
更快的读取速度，GB/s

16.4 12.3

测试中的平均数值
更快的写入速度，GB/s

13.0 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-2400C15-16GFT 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 34
读取速度，GB/s

12.3 16.4
写入速度，GB/s

8.1 13.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1706 3123

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Kingston 9905471-076.A00LF 8GB

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Kingston 9905598-028.A00G 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology CB4GU2400.M8E 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB