SK Hynix HMT325U6CFR8C-PB 2GB vs Kingston XN205T-MIE 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Kingston XN205T-MIE 16GB

Kingston XN205T-MIE 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Kingston XN205T-MIE 16GB

需要考虑的原因
Kingston XN205T-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.9 12.3

测试中的平均数值
更快的写入速度，GB/s

15.0 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston XN205T-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

12.3 16.9
写入速度，GB/s

8.1 15.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1706 3522

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMD32GX4M4B2133C10 8GB

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Samsung M393B1G70QH0-YK0 8GB

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Apacer Technology 78.C2GF2.AU00B 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston LV36D4U1S8HD-8XR 8GB

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Crucial Technology BLS4G4D240FSE.8FBD2 4GB

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Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

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Kingston 99U5584-007.A00LF 4GB

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Samsung M378A2K43DB1-CVF 16GB

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Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB