SK Hynix HMT325U6CFR8C-PB 2GB vs Kingston XRMWRN-HYA 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Kingston XRMWRN-HYA 16GB

Kingston XRMWRN-HYA 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Kingston XRMWRN-HYA 16GB

需要考虑的原因
Kingston XRMWRN-HYA 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 43

左右 -30% 更低的延时
更快的读取速度，GB/s

15.9 12.3

测试中的平均数值
更快的写入速度，GB/s

12.0 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston XRMWRN-HYA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 33
读取速度，GB/s

12.3 15.9
写入速度，GB/s

8.1 12.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1706 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5471-012.A00LF 4GB

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G Skill Intl F4-3000C16-16GTZR 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology CT8G4DFS824A.C8FE 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK128GX4M8A2133C13 16GB

Corsair CMK128GX4M8A2133C13 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB