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SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M393A2G40DB0-CPB 16GB

SK Hynix HMT325U6CFR8C-PB 2GB vs Samsung M393A2G40DB0-CPB 16GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 53
    左右 19% 更低的延时
  • 更快的读取速度，GB/s
    12.3 left arrow 10.3
    测试中的平均数值
Samsung M393A2G40DB0-CPB 16GB 需要考虑的原因
Samsung M393A2G40DB0-CPB 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M393A2G40DB0-CPB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 53
  • 读取速度，GB/s
    12.3 left arrow 10.3
  • 写入速度，GB/s
    8.1 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 2333

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

Samsung M393A2G40DB0-CPB 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M393A2G40DB0-CPB 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
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Corsair CMT64GX4M2C3600C18 32GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Corsair CMD64GX4M8X3800C19 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Panram International Corporation W4U2666P-8G 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Samsung M471B5773CHS-CH9 2GB
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内存RAM
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内存RAM
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Gloway International Co. Ltd. TYP4U3200E16082C 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMK32GX4M4D3600C18 8GB
内存RAM