SK Hynix HMT325U6CFR8C-PB 2GB vs Samsung M393A2G40EB1-CPB 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

43 56

左右 23% 更低的延时
更快的读取速度，GB/s

12.3 9.3

测试中的平均数值
更快的写入速度，GB/s

8.1 7.7

测试中的平均数值

Samsung M393A2G40EB1-CPB 16GB

需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M393A2G40EB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 56
读取速度，GB/s

12.3 9.3
写入速度，GB/s

8.1 7.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston ACR16D3LS1NGG/4G 4GB

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Corsair CMK128GX4M4A2666C16 32GB

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G Skill Intl F4-5333C22-8GTRG 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB